Six ultra-fast, low-capacitance diodes are integrated on a common monolithic substrate for matched static and dynamic behavior. Five diodes are independently accessible, and the sixth diode shares a common terminal with the substrate. The 14-lead SOIC version is specified for a -55 °C to 125 °C temperature range. Typical reverse recovery time is 1 ns, typical diode capacitance is 0.65 pF at -2 V, and forward-voltage matching is specified to 5 mV maximum.
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| Device type | Diode array |
| Diode count | 6 |
| Package | 14 Ld SOIC |
| Package drawing | M14.15 |
| Operating temperature range | -55 to 125°C |
| Peak inverse voltage, D1-D5 | 5 maxV |
| Peak inverse voltage, D6 | 0.5 maxV |
| Diode-to-substrate voltage, D1-D5 | 20, -1 maxV |
| DC forward current | 25 maxmA |
| Recurrent forward current | 100 maxmA |
| Forward surge current | 100 maxmA |
| Power dissipation per diode | 100 maxmW |
| SOIC thermal resistance, junction-to-ambient | 220 typ°C/W |
| Plastic package junction temperature | 150 max°C |
| Forward voltage at 1 mA | 0.73 typ, 0.78 maxV |
| Reverse breakdown voltage, D1-D5 | 5 min, 7 typV |
| Reverse leakage current at -4 V | 0.016 typ, 100 maxnA |
| Diode offset voltage at 1 mA | 0.5 typ, 5.0 maxmV |
| Reverse recovery time | 1.0 typns |
| Diode capacitance at -2 V | 0.65 typpF |
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