The transistor array contains five general-purpose silicon NPN transistors on a common monolithic substrate. Two transistors are internally connected as a differential pair, providing close electrical and thermal matching. Operation is specified from DC to 120 MHz with a wide operating current range and a typical low-frequency noise figure of 3.25 dB. The LM3045 version is supplied in a 14-lead cavity dual-in-line package and is rated for the full military temperature range from -55 °C to 125 °C.
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| Transistor count | 5 |
| Transistor type | General-purpose silicon NPN |
| Matched differential pair | Q1 and Q2 |
| Operating frequency range | DC to 120MHz |
| Operating temperature range | -55 to 125°C |
| Storage temperature range | -65 to 150°C |
| Collector-emitter voltage | 15 maxV |
| Collector-base voltage | 20 maxV |
| Collector-substrate voltage | 20 maxV |
| Emitter-base voltage | 5 maxV |
| Collector current | 50 maxmA |
| Total package power dissipation | 750 at 25 °CmW |
| Per-transistor power dissipation | 300 at 25 °CmW |
| Static forward current transfer ratio | 40 min, 100 typ at VCE 3 V and IC 1 mA |
| Base-emitter voltage | 0.715 typ at VCE 3 V and IE 1 mAV |
| Collector-emitter saturation voltage | 0.23 typ at IB 1 mA and IC 10 mAV |
| Low-frequency noise figure | 3.25 typ at 1 kHzdB |
| Gain-bandwidth product | 300 min, 550 typMHz |
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