Dual-band MOSFET power amplifier module supports E-GSM operation from 880 MHz to 915 MHz and DCS1800 operation from 1710 MHz to 1785 MHz. The module is designed for 3.5 V nominal operation with separate GSM and DCS RF paths and simple power control. It delivers typical output power of 36 dBm in E-GSM mode and 33 dBm in DCS1800 mode with pulsed operation. The RF-K-8 leadless thin package measures approximately 8 mm by 13.75 mm by 1.6 mm.
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| Amplifier type | MOSFET power amplifier module |
| Supported bands | E-GSM and DCS1800 |
| E-GSM frequency range | 880 to 915MHz |
| DCS1800 frequency range | 1710 to 1785MHz |
| Nominal supply voltage | 3.5V |
| Supply voltage operating range | 3.0 to 4.5V |
| Absolute maximum supply voltage | 8V |
| Input power range | -20 to 2dBm |
| Absolute maximum input power | 10dBm |
| Control voltage range | 0.2 to 2.2V |
| E-GSM output power typical | 36.0dBm |
| DCS1800 output power typical | 33dBm |
| E-GSM total efficiency typical | 50% |
| DCS1800 total efficiency typical | 43% |
| Input VSWR typical | 1.5 |
| Switching time typical | 12µs |
| Operating case temperature | -30 to +100°C |
| Storage temperature | -30 to +100°C |
| Package dimensions typical | 8 x 13.75 x 1.6mm |
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