Dual-band RF power amplifier module supports E-GSM transmit operation from 880 MHz to 915 MHz and DCS1800 transmit operation from 1710 MHz to 1785 MHz. The module operates from a 3.5 V typical supply and provides 35 dBm GSM output power or 32.5 dBm DCS output power under specified test conditions. It integrates output matching circuitry in an RF-K-8A leadless package measuring about 8.0 mm by 13.75 mm by 1.6 mm. The operating case temperature range is -25 °C to +85 °C.
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| Amplifier type | MOSFET power amplifier module |
| Application bands | E-GSM and DCS1800 |
| GSM frequency range | 880 to 915MHz |
| DCS frequency range | 1710 to 1785MHz |
| Supply voltage | 3.0 to 4.5, 3.5 typicalV |
| Input power | -2 to +2, 0 typicaldBm |
| Control voltage range | 0.2 to 2.2V |
| GSM output power | 35.0 min, 36.0 typicaldBm |
| DCS output power | 32.5 min, 33.5 typicaldBm |
| GSM total efficiency | 55 typical at 35 dBm output% |
| DCS total efficiency | 50 typical at 32.5 dBm output% |
| Input VSWR | 1.5 typical, 3 max |
| Operating case temperature | -25 to +85°C |
| Storage temperature | -30 to +100°C |
| Package code | RF-K-8A |
| Package dimensions | 8.0 x 13.75 x 1.6 typicalmm |
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