Triple-band RF MOSFET power amplifier module supports E-GSM, DCS1800, and DCS1900 handset transmit bands. The module operates from a typical 3.5 V supply and uses simple APC and band-select control inputs. Typical output power is 36.0 dBm for GSM900, 33.5 dBm for DCS1800, and 33.0 dBm for DCS1900 at rated test conditions. The leadless RF-K-8A package measures 8.0 mm by 13.75 mm by 1.6 mm typical and integrates output matching circuitry.
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| Amplifier type | MOS FET power amplifier module |
| Supported bands | E-GSM, DCS1800, DCS1900 |
| GSM frequency range | 880 to 915MHz |
| DCS1800 frequency range | 1710 to 1785MHz |
| DCS1900 frequency range | 1850 to 1910MHz |
| Supply voltage | 3.0 to 4.5, 3.5 typicalV |
| Input power | -2 to 2, 0 typicaldBm |
| APC control voltage range | 0.2 to 2.2V |
| GSM band-select voltage | 2.0 to 2.8V |
| DCS band-select voltage | 0 to 0.2V |
| GSM900 output power | 35.0 minimum, 36.0 typicaldBm |
| DCS1800 output power | 32.5 minimum, 33.5 typicaldBm |
| DCS1900 output power | 32.0 minimum, 33.0 typicaldBm |
| GSM900 total efficiency | 47 minimum, 55 typical% |
| DCS total efficiency | 40 minimum, 47 typical% |
| Input VSWR | 1.5 typical, 3 maximum |
| Switching time | 12 typicalµs |
| Operating case temperature | -25 to 90°C |
| Storage temperature | -30 to 100°C |
| Package dimensions | 8.0 x 13.75 x 1.6 typicalmm |
These are design resources that include the Hitachi PF08123B
Application note detailing cost-effective capacitive coupling alternatives to directional couplers for RF power control in GSM, DCS, and PCS wireless applications.
