This single N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and 70 A continuous drain current at a 25 °C case temperature. It is offered in a PPAK5*6-8L surface-mount package with 5.7 mΩ typical on-resistance at 10 V gate drive and 102 nC typical total gate charge. The device supports up to 260 A pulsed drain current, 57.7 W power dissipation at 25 °C case temperature, and a junction temperature range of -55 °C to 175 °C. It is intended for high-frequency point-of-load synchronous buck converters, power tools, and networking DC-DC power systems.
Checking distributor stock and pricing after the page loads.
Huayi Microelectronics HY1906C2 technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 70 @ Tc=25°CA |
| Continuous Drain Current | 49.5 @ Tc=100°CA |
| Pulsed Drain Current | 260A |
| Gate-Source Voltage | ±25V |
| On-Resistance | 5.7 typ @ VGS=10VmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation | 57.7 @ Tc=25°CW |
| Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 2.6°C/W |
| Avalanche Energy | 286.6mJ |
| Input Capacitance | 4620pF |
| Total Gate Charge | 102nC |
| Package | PPAK5*6-8L |
