N-channel enhancement-mode power MOSFET supports a 100 V drain-source voltage and 140 A continuous drain current at 25 °C case temperature. The device has a typical 6.2 mΩ drain-source on-resistance at 10 V gate drive and 70 A drain current. It is rated for pulsed drain current up to 550 A and single-pulse avalanche energy of 992 mJ. The HY3410B package code corresponds to a TO-263-2L surface-mount package for switching and inverter power-management applications.
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| FET Type | N-channel enhancement mode MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current | 140 at TC=25°CA |
| Continuous Drain Current | 100 at TC=100°CA |
| Pulsed Drain Current | 550A |
| Power Dissipation | 285 at TC=25°CW |
| Junction Temperature | 175 max°C |
| Storage Temperature Range | -55 to 175°C |
| Drain-Source On Resistance | 6.2 typ, 7.5 max at VGS=10V, IDS=70AmΩ |
| Gate Threshold Voltage | 2.0 min, 3.0 typ, 4.0 maxV |
| Zero Gate Voltage Drain Current | 1 max at VDS=100V, VGS=0VµA |
| Input Capacitance | 6140 typpF |
| Output Capacitance | 943 typpF |
| Reverse Transfer Capacitance | 490 typpF |
| Total Gate Charge | 130 typnC |
| Single Pulse Avalanche Energy | 992mJ |
| Thermal Resistance Junction-to-Case | 0.53°C/W |
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