N-channel enhancement-mode MOSFET supports a 100 V drain-source voltage and 140 A continuous drain current at 25 °C case temperature. The device has 6.2 mΩ typical on-resistance at 10 V gate drive and 70 A drain current. It is rated for a 175 °C maximum junction temperature, ±25 V gate-source voltage, and 285 W power dissipation at 25 °C case temperature. The HY3410P ordering suffix identifies the TO-220FB-3L package version.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25°C Case | 140A |
| Continuous Drain Current at 100°C Case | 100A |
| Gate-Source Voltage | ±25V |
| Drain-Source On-State Resistance | 6.2 typ, 7.5 max at VGS=10 V, IDS=70 AmΩ |
| Gate Threshold Voltage | 2.0 min, 3.0 typ, 4.0 maxV |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Maximum Power Dissipation at 25°C Case | 285W |
| Maximum Power Dissipation at 100°C Case | 143W |
| Thermal Resistance Junction to Case | 0.53°C/W |
| Thermal Resistance Junction to Ambient | 62.5°C/W |
| Input Capacitance | 6140 typpF |
| Output Capacitance | 943 typpF |
| Reverse Transfer Capacitance | 490 typpF |
| Total Gate Charge | 130 typnC |
| Gate-Source Charge | 25 typnC |
| Gate-Drain Charge | 32 typnC |
| Package | TO-220FB-3L |
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