This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 190 A continuous drain current. It is offered in the TO-247A-3L package and has a typical drain-source on-resistance of 3.2 mΩ at 10 V gate drive. The part supports up to 306 W power dissipation, a ±25 V gate-source rating, and operation to a 175 °C maximum junction temperature. It is intended for switching applications and power management in inverter systems.
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Huayi Microelectronics HY3506W technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 190A |
| Pulsed Drain Current | 750A |
| Gate-Source Voltage | ±25V |
| Power Dissipation | 306W |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Drain-Source On-Resistance | 3.2 typ, 4.0 max @ VGS=10VmΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Thermal Resistance Junction-to-Case | 0.49°C/W |
| Thermal Resistance Junction-to-Ambient | 40°C/W |
| Input Capacitance | 13100pF |
| Output Capacitance | 1010pF |
| Reverse Transfer Capacitance | 402pF |
| Total Gate Charge | 160nC |
| Gate-Source Charge | 25nC |
| Gate-Drain Charge | 38nC |
| Turn-On Delay Time | 23ns |
| Turn-Off Delay Time | 77ns |
| Turn-Off Fall Time | 27ns |
| Diode Forward Voltage | 0.8 typ, 1.2 maxV |
| Reverse Recovery Time | 60ns |
| Reverse Recovery Charge | 100nC |
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