This N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and 162 A continuous drain current at 25 °C. It provides 3.5 mΩ typical and 4.5 mΩ maximum on-resistance at VGS = 10 V, with 214 W maximum power dissipation at 25 °C. The device operates to a 175 °C maximum junction temperature and is packaged in TO-263-2L for switching applications, inverter power management, electric vehicle controllers, and battery management systems. It meets RoHS requirements and the manufacturer lists the part as discontinued.
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Huayi Microelectronics HY3606B technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 162 @ 25°CA |
| Continuous Drain Current | 105 @ 100°CA |
| Gate-Source Voltage | ±25V |
| On-Resistance | 3.5 typ @ VGS=10V, IDS=81AmΩ |
| On-Resistance | 4.5 max @ VGS=10V, IDS=81AmΩ |
| Power Dissipation | 214 @ 25°CW |
| Power Dissipation | 107 @ 100°CW |
| Junction Temperature | 175 max°C |
| Storage Temperature Range | -55 to 175°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 4376pF |
| Output Capacitance | 857pF |
| Reverse Transfer Capacitance | 334pF |
| Total Gate Charge | 130nC |
| Gate-Source Charge | 24nC |
| Gate-Drain Charge | 47nC |
| Reverse Recovery Time | 30ns |
| Reverse Recovery Charge | 52nC |
| RoHS | Compliant |
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