This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 162 A continuous drain current at 25°C case temperature. It provides 3.5 mΩ typical on-resistance at VGS = 10 V and 81 A, with up to 214 W power dissipation at 25°C case temperature. The device supports junction temperatures up to 175°C and a storage range of -55°C to 175°C. It is intended for inverter power management and switching applications such as electric vehicle controllers and lithium battery protection boards.
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Huayi Microelectronics HY3606B6 technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current | 162 @ TC=25°CA |
| Continuous Drain Current | 105 @ TC=100°CA |
| Pulsed Drain Current | 583A |
| Power Dissipation | 214 @ TC=25°CW |
| Junction Temperature | 175 max°C |
| Storage Temperature Range | -55 to 175°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-Source On-Resistance | 3.5 typ, 4.5 max @ VGS=10V, IDS=81AmΩ |
| Thermal Resistance Junction-to-Case | 0.7°C/W |
| Input Capacitance | 4376pF |
| Output Capacitance | 857pF |
| Reverse Transfer Capacitance | 334pF |
| Total Gate Charge | 130nC |
| Gate-Source Charge | 24nC |
| Gate-Drain Charge | 47nC |
| Reverse Recovery Time | 30ns |
| Reverse Recovery Charge | 52nC |
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