This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 162 A continuous drain current at 25 °C case temperature. The HY3606P uses a TO-220FB-3L package and is specified for switching and inverter power management applications, including electric vehicle controllers, lithium battery protection boards, and inverter systems. It supports up to ±25 V gate-source voltage, 214 W maximum power dissipation at 25 °C case temperature, and 175 °C maximum junction temperature. The device is RoHS compliant, 100% avalanche tested, and has been discontinued with HYG025N06LS1P listed as the recommended replacement.
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Huayi Microelectronics HY3606P technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 162A |
| Continuous Drain Current at Tc=100°C | 105A |
| Gate-Source Voltage | ±25V |
| Maximum Power Dissipation at Tc=25°C | 214W |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.7°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Zero Gate Voltage Drain Current | 1 maxµA |
| Gate Leakage Current | ±100 maxnA |
| Input Capacitance | 4376 typpF |
| Output Capacitance | 857 typpF |
| Reverse Transfer Capacitance | 334 typpF |
| Total Gate Charge | 130 typnC |
| Diode Forward Voltage | 0.8 typ, 1.2 maxV |
| RoHS | Compliant |
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