N-channel enhancement-mode MOSFET supports an 85 V drain-source rating and 160 A continuous drain current at 25 °C case temperature. The device has a typical 6.2 mΩ drain-source on-resistance at 10 V gate drive and 80 A drain current. It is avalanche tested with a 570 mJ single-pulse avalanche energy rating and is intended for switching and DC/DC converter applications. The TO-263-2L package uses the B package code and is supplied in reel packaging. Lead-free, RoHS-compliant, and halogen-free construction is stated for the device family.
Checking distributor stock and pricing after the page loads.
| FET Type | N-channel enhancement mode |
| Drain-Source Voltage | 85V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current at Tc=25°C | 160A |
| Continuous Drain Current at Tc=100°C | 113A |
| Pulsed Drain Current | 500A |
| Power Dissipation at Tc=25°C | 250W |
| Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.6°C/W |
| Drain-Source On-Resistance Typical | 6.2 at VGS=10 V, ID=80 AmΩ |
| Drain-Source On-Resistance Maximum | 7.5 at VGS=10 V, ID=80 AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance Typical | 4680pF |
| Output Capacitance Typical | 590pF |
| Reverse Transfer Capacitance Typical | 397pF |
| Total Gate Charge Typical | 132nC |
| Single-Pulse Avalanche Energy | 570mJ |
| Package | TO-263-2L |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
