N-channel enhancement-mode MOSFET supports an 85 V drain-source rating and 160 A continuous drain current at 25 °C case temperature. The device has a typical on-resistance of 6.2 mΩ at 10 V gate drive and 80 A drain current. It is supplied in a TO-220FB-3L package with tube packing and is intended for switch applications and DC/DC converters. Lead-free and RoHS-compliant construction is indicated in the datasheet.
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| FET Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 85V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current at Tc=25°C | 160A |
| Continuous Drain Current at Tc=100°C | 113A |
| Pulsed Drain Current | 500A |
| Power Dissipation at Tc=25°C | 250W |
| Junction Temperature Range | -55 to 175°C |
| Drain-Source On Resistance | 6.2 typ, 7.5 max at VGS=10V, ID=80AmΩ |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Input Capacitance | 4680 typpF |
| Total Gate Charge | 132 typnC |
| Thermal Resistance Junction-to-Case | 0.6°C/W |
| Single Pulsed Avalanche Energy | 570mJ |
| Package | TO-220FB-3L |
| RoHS | Compliant |
| Lead Free | Yes |
