This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 190 A continuous drain current. It uses a trench process and is offered in a TO-263-2L surface-mount package with 3.2 mΩ typical RDS(on) at 10 V gate drive and 4 mΩ maximum on-resistance. The device supports ±25 V gate-source voltage, 220 W power dissipation, and 135 nC typical gate charge. It is intended for low-frequency switching in battery protection boards, motor drives, inverters, and electric vehicle controllers, and the manufacturer states RoHS compliance.
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Huayi Microelectronics HY3906B technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 190A |
| RDS(on) (typ) | 3.2 @ VGS=10VmΩ |
| RDS(on) (max) | 4 @ VGS=10VmΩ |
| Gate Charge (Qg) | 135 @ 10VnC |
| Gate Threshold Voltage | 4V |
| Power Dissipation | 220W |
| Input Capacitance (Ciss) | 5.726nF |
| Output Capacitance (Coss) | 1.014nF |
| Reverse Transfer Capacitance (Crss) | 506pF |
| Gate-Source Voltage | ±25V |
| Avalanche Tested | 100% |
| Package | TO-263-2L |
| RoHS | Compliant |
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