This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 190 A continuous drain current. It is supplied in a TO-220FB package and is listed with 220 W power dissipation. The on-resistance is specified as 4 mΩ at 10 V gate drive, with 135 nC gate charge at 10 V. Listed capacitance values include 5.726 nF input capacitance, 1.014 nF output capacitance, and 506 pF reverse transfer capacitance. The gate threshold voltage is given as 4 V and the part is marked RoHS compliant.
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Huayi Microelectronics HY3906P technical specifications.
| Channel Type | N-Channel |
| Number of Channels | 1 |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 190A |
| Power Dissipation (Pd) | 220W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| RDS(on) | 4 @ 10 VmΩ |
| Gate Charge (Qg) | 135 @ 10 VnC |
| Input Capacitance (Ciss) | 5.726nF |
| Output Capacitance (Coss) | 1.014nF |
| Reverse Transfer Capacitance (Crss) | 506pF |
| RoHS | Yes |
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