This N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and 190 A continuous drain current at 25°C case temperature. It is supplied in a TO-247A-3L package and has a typical 2.6 mΩ on-resistance at VGS = 10 V, with a 3.5 mΩ maximum under the stated test conditions. The device supports up to 283 W power dissipation at 25°C case temperature, a ±25 V gate-source rating, and a 175°C maximum junction temperature. It is RoHS compliant and is intended for inverter power management and switching applications including electric vehicle controllers and lithium battery protection boards.
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Huayi Microelectronics HY3906W technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 190A |
| Continuous Drain Current @ 100°C Case | 128A |
| On-Resistance | 2.6 typmΩ |
| On-Resistance Max | 3.5mΩ |
| Gate-Source Voltage | ±25V |
| Power Dissipation | 283W |
| Power Dissipation @ 100°C Case | 141W |
| Junction Temperature Max | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Gate Leakage Current | ±100nA |
| Input Capacitance | 5903pF |
| Output Capacitance | 1014pF |
| Reverse Transfer Capacitance | 506pF |
| Total Gate Charge | 135nC |
| Reverse Recovery Time | 48ns |
| Reverse Recovery Charge | 72nC |
| Thermal Resistance Junction-to-Case | 0.53°C/W |
| RoHS | Compliant |
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