N-channel enhancement-mode MOSFET provides an 80 V drain-source rating and 200 A continuous drain current at 25 °C. The device has a typical 3.5 mΩ on-resistance at 10 V gate drive and 80 A drain current. It is supplied in a TO-263-2L package for switching, inverter power management, motor control, battery protection, and power-tool applications. The junction temperature range is -55 °C to 175 °C, with 300 W maximum power dissipation at 25 °C case temperature. Lead-free, RoHS-compliant, and halogen-free green construction is specified.
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| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 80V |
| Continuous Drain Current at Tc=25°C | 200A |
| Continuous Drain Current at Tc=100°C | 141.4A |
| Pulsed Drain Current | 550A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-State Resistance | 3.5 typ, 4 max at VGS=10V, ID=80AmΩ |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Maximum Power Dissipation at Tc=25°C | 300W |
| Junction Temperature Range | -55 to 175°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.5°C/W |
| Single Pulsed Avalanche Energy | 762mJ |
| Input Capacitance | 7980 typpF |
| Total Gate Charge | 161 typnC |
| Package | TO-263-2L |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen-free | Yes |
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