N-channel enhancement-mode power MOSFET supports an 80 V drain-source voltage rating and high continuous drain current capability. The device family specifies 2.9 mΩ typical on-resistance at 10 V gate drive and 100 A drain current. It is rated for 175 °C maximum junction temperature and includes avalanche-tested operation. Lead-free and RoHS-compliant assembly options are described for the family, but exact suffix-level compliance was not confirmed.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 80V |
| Continuous Drain Current | 200 at TC=25°C; 153 at TC=100°CA |
| Pulsed Drain Current | 800A |
| Gate-Source Voltage | ±25V |
| Drain-Source On-Resistance | 2.9 typical, 3.5 maximum at VGS=10V, ID=100AmΩ |
| Gate Threshold Voltage | 2.0 minimum, 3.0 typical, 4.0 maximumV |
| Maximum Power Dissipation | 397 at TC=25°C; 199 at TC=100°CW |
| Junction Temperature | 175 maximum°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.38°C/W |
| Single-Pulse Avalanche Energy | 1736mJ |
| Input Capacitance | 7398 typicalpF |
| Output Capacitance | 1029 typicalpF |
| Reverse Transfer Capacitance | 650 typicalpF |
| Total Gate Charge | 195 typicalnC |
| Reverse Recovery Time | 30 typicalns |
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