This device is a single N-channel power MOSFET rated for 60 V drain-source voltage and 230 A continuous drain current at 25 °C case temperature. It uses Trench process technology and is offered in a TO-263-2L surface-mount package with a maximum RDS(on) of 3 mΩ at 10 V gate drive. The part is intended for low-frequency power switching in battery protection boards, motor drives, and inverters. Maximum power dissipation is 258 W at 25 °C case temperature, gate-source voltage is rated to ±25 V, and threshold voltage is specified from 2 V to 4 V. Typical input capacitance is 7219 pF and typical total gate charge is 171 nC. The device is marked as RoHS compliant and the manufacturer lists it in mass production.
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Huayi Microelectronics HY4306B technical specifications.
| Transistor Type | Single N-Channel |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) @ Tc=25°C | 230A |
| RDS(on) Max @ Vgs=10V | 3mΩ |
| Power Dissipation @ Tc=25°C | 258W |
| Gate-Source Voltage (Vgs) | ±25V |
| Gate Threshold Voltage (Vth) | 2 to 4V |
| Input Capacitance (Ciss) Typ | 7219pF |
| Total Gate Charge (Qg) Typ | 171nC |
| Process Technology | Trench |
| RoHS | Compliant |
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