This single N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and 160 A continuous drain current in a TO-252-2L package. It offers typical on-resistance of 2.6 mΩ at 10 V gate drive and 3.8 mΩ at 4.5 V, with 58.3 nC typical total gate charge at 10 V. The device is specified for up to 125 W power dissipation, junction temperature to 175 °C, and 100% avalanche testing. It is intended for high-frequency point-of-load synchronous buck converters, power tools, and networking DC-DC power systems.
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Huayi Microelectronics HYG025N06LS1D technical specifications.
| Configuration | Single N-Channel |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 160A |
| Continuous Drain Current at Tc=100°C | 113A |
| Power Dissipation (Pd) | 125W |
| Gate-Source Voltage (Vgs) | ±20V |
| RDS(on) Typ @ VGS=10V | 2.6mΩ |
| RDS(on) Typ @ VGS=4.5V | 3.8mΩ |
| Gate Threshold Voltage (Vgs(th)) | 1.0 to 3.0V |
| Total Gate Charge Qg @10V | 58.3nC |
| Input Capacitance (Ciss) | 3915pF |
| Reverse Transfer Capacitance (Crss) | 10.2pF |
| Single Pulsed Avalanche Energy (EAS) | 301.8mJ |
| Thermal Resistance Junction-to-Case | 1.2°C/W |
| Operating Temperature | -55 to 175°C |
| RoHS | Compliant |
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