This N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and 145 A continuous drain current at 25°C case temperature. It offers low on-resistance of 2.8 mΩ typical at 10 V gate drive and 4.1 mΩ typical at 4.5 V gate drive. The device is supplied in a TO-263-2L surface-mount package and is specified for up to 125 W power dissipation with a junction temperature range of -55°C to 175°C. Typical dynamic characteristics include 69.8 nC total gate charge, 4381 pF input capacitance, and 40 ns reverse recovery time. It is intended for high-frequency point-of-load synchronous buck converters and power tool applications.
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Huayi Microelectronics HYG025N06LS2B technical specifications.
| Channel Type | N-Channel |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 145A |
| Pulsed Drain Current | 570A |
| Power Dissipation | 125W |
| Drain-Source On Resistance @ VGS=10V | 2.8 typmΩ |
| Drain-Source On Resistance @ VGS=4.5V | 4.1 typmΩ |
| Gate Threshold Voltage | 2.1 typV |
| Total Gate Charge | 69.8 typnC |
| Input Capacitance | 4381 typpF |
| Output Capacitance | 1101 typpF |
| Reverse Transfer Capacitance | 10 typpF |
| Reverse Recovery Time | 40 typns |
| Reverse Recovery Charge | 48.6 typnC |
| Thermal Resistance Junction-to-Case | 1.2°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Single Pulsed Avalanche Energy | 294.5mJ |
| RoHS | Compliant |
| Halogen Free | Yes |
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