This device is a single N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 67 A continuous drain current at 25°C case temperature. It provides low on-resistance of 5.5 mΩ typical at 10 V gate drive and 7.6 mΩ typical at 4.5 V gate drive, making it suitable for DC/DC power management and switching applications. The part is 100% avalanche tested, operates with a junction temperature range of -55°C to 175°C, and is offered in a TO-252-2L package. The datasheet states that the lead-free version is RoHS compliant and available as a halogen-free device.
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Huayi Microelectronics HYG052N06LS1D technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ Tc=25°C | 67A |
| Continuous Drain Current @ Tc=100°C | 47A |
| Gate-Source Voltage | ±20V |
| Junction Temperature Range | -55 to 175°C |
| Storage Temperature Range | -55 to 175°C |
| Power Dissipation @ Tc=25°C | 60W |
| Thermal Resistance Junction-to-Case | 2.5°C/W |
| Thermal Resistance Junction-to-Ambient | 110°C/W |
| Single Pulsed Avalanche Energy | 169.8mJ |
| Gate Threshold Voltage | 1 to 3V |
| Drain-Source On-Resistance @ VGS=10V | 5.5 typmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 7.6 typmΩ |
| Input Capacitance | 1638 typpF |
| Total Gate Charge @ VGS=10V | 28.7 typnC |
| Total Gate Charge @ VGS=4.5V | 13.7 typnC |
| Reverse Recovery Time | 27 typns |
| RoHS | Compliant |
| Halogen Free | Yes |
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