This device is a 45 V N-channel power MOSFET in a TO-220F package. It is rated for 59 A continuous drain current at 25°C case temperature and 42 A at 100°C, with 200 A pulsed drain current capability. Typical on-resistance is 3.5 mΩ at 10 V gate drive and 4.6 mΩ at 4.5 V gate drive. The part supports up to 60 W power dissipation, operates from -55°C to 175°C, and is described for high-speed switching, synchronous rectification, motor control, UPS, and SMPS applications. The datasheet states the device is lead free and halogen free.
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Hunteck Semiconductor HGA045NE4SL technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 45V |
| Continuous Drain Current (Tc=25°C) | 59A |
| Continuous Drain Current (Tc=100°C) | 42A |
| Pulsed Drain Current | 200A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 60W |
| Operating and Storage Temperature | -55 to 175°C |
| Thermal Resistance Junction-Case | 4.5°C/W |
| Thermal Resistance Junction-Ambient | 33°C/W |
| Drain-Source On-Resistance (typ @ Vgs=10V) | 3.5mΩ |
| Drain-Source On-Resistance (typ @ Vgs=4.5V) | 4.6mΩ |
| Input Capacitance | 2159pF |
| Output Capacitance | 756pF |
| Reverse Transfer Capacitance | 118pF |
| Total Gate Charge (typ @ Vgs=10V) | 30nC |
| Total Gate Charge (typ @ Vgs=4.5V) | 16nC |
| Lead Free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Hunteck Semiconductor HGA045NE4SL to view detailed technical specifications.
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