60 V N-channel power MOSFET in a TO-220F package for high-speed switching and synchronous rectification applications. It is rated for 56 A continuous drain current at 25°C case temperature, 80 W power dissipation, and a maximum RDS(on) of 5.6 mΩ at 10 V gate drive. The device has 35 nC typical total gate charge, 2207 pF input capacitance, and a -55°C to 175°C operating and storage temperature range. The datasheet also states enhanced avalanche ruggedness, enhanced body-diode dv/dt capability, and lead-free halogen-free construction.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Hunteck Semiconductor HGA053N06S datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Hunteck Semiconductor HGA053N06S technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Tc=25°C) | 56A |
| Continuous Drain Current (Tc=100°C) | 40A |
| Power Dissipation (Tc=25°C) | 80W |
| Drain-Source On-Resistance Typ | 4.8mΩ |
| Drain-Source On-Resistance Max | 5.6mΩ |
| Total Gate Charge Typ | 35nC |
| Gate-Source Charge Typ | 11nC |
| Gate-Drain Charge Typ | 7nC |
| Input Capacitance Typ | 2207pF |
| Output Capacitance Typ | 660pF |
| Reverse Transfer Capacitance Typ | 60pF |
| Gate-Source Voltage | ±20V |
| Avalanche Energy Single Pulse | 250mJ |
| Operating and Storage Temperature | -55 to 175°C |
| Thermal Resistance Junction-Case | 4.5°C/W |
| Thermal Resistance Junction-Ambient | 60°C/W |
| Configuration | Single |
| Lead Free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Hunteck Semiconductor HGA053N06S to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
