This device is a single N-channel power MOSFET rated for 60 V drain-source voltage and 54 A continuous drain current at 25 °C. It is offered in a TO-220F package and specifies a maximum gate threshold voltage of 2.4 V. Maximum on-resistance is 5.3 mΩ at 10 V gate drive and 7.5 mΩ at 4.5 V gate drive. Gate charge values are 36 nC total, 4.5 nC gate-source, and 7.5 nC gate-drain, and the part is listed for industrial applications.
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Hunteck Semiconductor HGA053N06SL technical specifications.
| Polarity | N |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Continuous Drain Current at 25°C | 54A |
| Gate Threshold Voltage Max | 2.4V |
| Drain-Source On-Resistance Max @ 10V | 5.3mΩ |
| Drain-Source On-Resistance Max @ 4.5V | 7.5mΩ |
| Total Gate Charge | 36nC |
| Gate-Source Charge | 4.5nC |
| Gate-Drain Charge | 7.5nC |
| Package | TO-220F |
| Application | Industrial |
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