This device is a 60 V N-channel power MOSFET in a TO-263 package. It is rated for 156 A continuous drain current at 25°C under silicon-limited conditions and 120 A under package-limited conditions, with 3.1 mΩ typical RDS(on) at VGS = 10 V and ID = 20 A. The datasheet lists a maximum gate threshold voltage of 4 V, total gate charge of 53 nC, and input capacitance of 3487 pF. It is intended for synchronous rectification in SMPS, hard-switching and high-speed circuits, power tools, UPS systems, and motor control. The device is specified as lead free and halogen free.
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Hunteck Semiconductor HGB040N06S technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 156A |
| Continuous Drain Current (Package Limited, Tc=25°C) | 120A |
| Continuous Drain Current (Tc=100°C) | 110A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance Typ | 3.1mΩ |
| Drain-Source On-Resistance Max | 3.7mΩ |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge | 53nC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 11nC |
| Input Capacitance | 3487pF |
| Output Capacitance | 984pF |
| Gate Resistance | 1.5Ω |
| Thermal Resistance Junction-Case | 0.85°C/W |
| Operating Junction Temperature Range | -55 to 175°C |
| Configuration | Single |
| Lead Free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Hunteck Semiconductor HGB040N06S to view detailed technical specifications.
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