This device is a single N-channel power MOSFET rated for 60 V drain-to-source voltage and 105 A continuous drain current at 25 °C. It is offered in a TO-263 package and is listed in the 60 V family. Maximum on-resistance is specified as 5 mΩ at 10 V gate drive and 7.2 mΩ at 4.5 V gate drive. Gate charge is listed as 36 nC, with 4.5 nC gate-to-source charge and 7.5 nC gate-to-drain charge. The maximum gate-threshold voltage shown on the manufacturer listing is 2.4 V.
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Hunteck Semiconductor HGB053N06SL technical specifications.
| Transistor Type | MOSFET |
| Channel Type | N |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (25°C) | 105A |
| Gate Threshold Voltage (max) | 2.4V |
| On-Resistance @ 10 V | 5mΩ |
| On-Resistance @ 4.5 V | 7.2mΩ |
| Total Gate Charge | 36nC |
| Gate-Source Charge | 4.5nC |
| Gate-Drain Charge | 7.5nC |
| Package | TO-263 |
| Lead Free | Yes |
| Halogen Free | Yes |
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