N-channel power MOSFET provides an 80 V drain-source rating and up to 144 A silicon-limited continuous drain current in a TO-252 package. Low on-resistance is specified at 3.2 mΩ typical and 3.8 mΩ maximum with a 10 V gate drive. The device supports high-speed power switching, avalanche ruggedness, and enhanced body-diode dv/dt capability. Operating and storage junction temperature range is -55 °C to 175 °C, with 1 °C/W junction-to-case thermal resistance. The package is lead-free and halogen-free.
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| Product type | N-channel power MOSFET |
| Configuration | Single |
| Drain-source voltage | 80V |
| Continuous drain current, silicon limited | 144A |
| Continuous drain current, package limited | 120A |
| Continuous drain current at TC=100°C | 102A |
| Pulsed drain current | 400A |
| Gate-source voltage | ±20V |
| Power dissipation at TC=25°C | 150W |
| Single-pulse avalanche energy | 80mJ |
| Drain-source on-resistance, typical | 3.2mΩ |
| Drain-source on-resistance, maximum | 3.8mΩ |
| Gate threshold voltage, typical | 2.7V |
| Gate threshold voltage, maximum | 4.0V |
| Total gate charge | 68nC |
| Gate-source charge | 13nC |
| Gate-drain charge | 17nC |
| Input capacitance | 4347pF |
| Output capacitance | 703pF |
| Reverse transfer capacitance | 28pF |
| Operating and storage temperature | -55 to 175°C |
| Thermal resistance junction-to-case | 1°C/W |
| Package | TO-252 |
| Lead Free | Yes |
| Halogen Free | Yes |
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