This device is a single N-channel MOSFET in a TO-252 package. It is rated for 60 V drain-source voltage and 144 A continuous drain current at 25°C. The maximum gate threshold voltage is 4 V, and the maximum on-resistance is 4 mΩ at 10 V gate drive. Total gate charge is 53 nC, with 17 nC gate-source charge and 11 nC gate-drain charge, making it suitable for industrial power switching applications.
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Hunteck Semiconductor HGD040N06S technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (25°C) | 144A |
| Gate Threshold Voltage (max) | 4V |
| Drain-Source On-Resistance @ 10V | 4mΩ |
| Total Gate Charge | 53nC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 11nC |
| Application | Industrial |
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