This 60 V N-channel power MOSFET is offered in a TO-252 package under the HGD040N06SL ordering code. It supports 132 A continuous drain current at 25 °C case temperature under silicon-limited conditions, 93 A at 100 °C, and 70 A package-limited current at 25 °C. The device is specified for up to 46 W power dissipation, ±20 V gate-source voltage, and 150 mJ single-pulse avalanche energy. It is intended for synchronous rectification in SMPS, hard-switching high-speed circuits, power tools, UPS equipment, and motor control. The datasheet states that the device is lead free, halogen free, and rated for -55 °C to 175 °C operation and storage.
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Hunteck Semiconductor HGD040N06SL technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 132A |
| Continuous Drain Current (Silicon Limited, Tc=100°C) | 93A |
| Continuous Drain Current (Package Limited, Tc=25°C) | 70A |
| Pulsed Drain Current | 410A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 46W |
| Single Pulse Avalanche Energy | 150mJ |
| Operating and Storage Temperature Range | -55 to 175°C |
| Lead Free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Hunteck Semiconductor HGD040N06SL to view detailed technical specifications.
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