This device is an N-channel power MOSFET for industrial applications. It is rated for 45 V drain-source voltage and 114 A continuous drain current. The device is offered in a TO-252 package with a maximum threshold voltage of 2.2 V. Maximum on-resistance is 4.5 mΩ at 10 V gate drive and 7 mΩ at 4.5 V gate drive. Typical gate charge is 42 nC, with 4 nC gate-source charge and 10 nC gate-drain charge.
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Hunteck Semiconductor HGD045NE4SL technical specifications.
| Transistor Polarity | N-Channel |
| Drain-Source Voltage | 45V |
| Continuous Drain Current | 114A |
| Threshold Voltage Max | 2.2V |
| On-Resistance Max @10V | 4.5mΩ |
| On-Resistance Max @4.5V | 7mΩ |
| Total Gate Charge | 42nC |
| Gate-Source Charge | 4nC |
| Gate-Drain Charge | 10nC |
| Configuration | Single |
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