N-channel power MOSFET provides an 80 V drain-source rating and 150 A continuous drain current at 25 °C case temperature. The device supports logic-level gate drive with maximum on-resistance of 3.8 mΩ at 10 V and 5.3 mΩ at 4.5 V. It is supplied in a three-lead TO-220 package and is rated for operation from -55 °C to 175 °C junction temperature. The MOSFET includes enhanced avalanche ruggedness and body-diode dv/dt capability and is specified as lead-free and halogen-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Hunteck Semiconductor HGP035N08AL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Transistor Polarity | N-Channel |
| Drain Source Voltage | 80V |
| Continuous Drain Current at 25°C | 150A |
| Continuous Drain Current at 100°C | 106A |
| Gate Source Voltage | ±20V |
| Power Dissipation | 172W |
| Single Pulse Avalanche Energy | 400mJ |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction to Case | 0.87°C/W |
| Thermal Resistance Junction to Ambient | 60°C/W |
| Drain Source On Resistance at 10 V | 3.8 maxmΩ |
| Drain Source On Resistance at 4.5 V | 5.3 maxmΩ |
| Gate Threshold Voltage | 1.0 min, 1.8 typ, 2.4 maxV |
| Total Gate Charge at 10 V | 68nC |
| Gate Source Charge | 8nC |
| Gate Drain Charge | 16nC |
| Configuration | Single |
| Package | TO-220 |
| Lead Free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Hunteck Semiconductor HGP035N08AL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
