This N-channel power MOSFET is rated for 60 V drain-to-source operation and is supplied in a TO-220 package. It supports 156 A continuous drain current at 25°C under silicon-limited conditions, 120 A package-limited current, and 110 A at 100°C. The device specifies 4 mΩ maximum drain-source on-resistance at 10 V gate drive, 53 nC total gate charge, and 240 W power dissipation at TC = 25°C. Its junction and storage temperature range is -55°C to 175°C, and the datasheet states enhanced avalanche ruggedness with lead-free and halogen-free construction.
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Hunteck Semiconductor HGP040N06S technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 156A |
| Continuous Drain Current (Package Limited, Tc=25°C) | 120A |
| Continuous Drain Current (Tc=100°C) | 110A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance Max @ Vgs=10V | 4mΩ |
| Drain-Source On-Resistance Typ @ Vgs=10V | 3.4mΩ |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge @ 10V | 53nC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 11nC |
| Input Capacitance | 3487pF |
| Output Capacitance | 984pF |
| Reverse Transfer Capacitance | 70pF |
| Gate Resistance | 1.5Ω |
| Power Dissipation | 240W |
| Single Pulse Avalanche Energy | 176mJ |
| Thermal Resistance Junction-Case | 0.85°C/W |
| Operating Junction Temperature Range | -55 to 175°C |
| Lead Free | Yes |
| Halogen Free | Yes |
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