This N-channel MOSFET is rated for 45 V drain-to-source voltage and 20 A continuous drain current at 25 °C. It is offered in a single configuration and packaged in SOIC-8 for industrial applications. The maximum gate threshold voltage is 2.2 V. Maximum on-resistance is 3.8 mΩ at 10 V gate drive and 5.2 mΩ at 4.5 V gate drive. Typical total gate charge is 50 nC, with 8 nC gate-to-source charge and 9.5 nC gate-to-drain charge.
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Hunteck Semiconductor HGS038NE4SL technical specifications.
| Product type | MOSFET |
| Application | Industrial |
| Polarity | N |
| Configuration | Single |
| Package | SOIC-8 |
| Drain-source voltage (Vds) | 45V |
| Continuous drain current at 25°C (Id) | 20A |
| Gate threshold voltage max | 2.2V |
| Rds(on) max at Vgs=10V | 3.8mΩ |
| Rds(on) max at Vgs=4.5V | 5.2mΩ |
| Total gate charge (Qg) | 50nC |
| Gate-to-source charge (Qgs) | 8nC |
| Gate-to-drain charge (Qgd) | 9.5nC |
Download the complete datasheet for Hunteck Semiconductor HGS038NE4SL to view detailed technical specifications.
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