An N-channel power MOSFET rated for 60 V drain-to-source operation and 12.8 A continuous drain current. It is supplied in an SOIC-8 package and uses a single-device configuration for compact power switching designs. Typical on-resistance is 8.8 mΩ at 10 V gate drive and 9.8 mΩ at 4.5 V, with typical total gate charge of 18.5 nC. The device supports operation from -55 °C to 150 °C and is intended for synchronous rectification, DC/DC conversion, and other high-speed switching circuits.
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Hunteck Semiconductor HGS098N06SL technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 12.8A |
| Package | SOIC-8 |
| Drain-Source On-Resistance Typ @ VGS=10V | 8.8mΩ |
| Drain-Source On-Resistance Typ @ VGS=4.5V | 9.8mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 14mΩ |
| Total Gate Charge | 18.5nC |
| Gate-Source Charge | 4.5nC |
| Gate-Drain Charge | 3.5nC |
| Power Dissipation | 3.4W |
| Thermal Resistance Junction-to-Ambient | 69°C/W |
| Thermal Resistance Junction-to-Lead | 21°C/W |
| Gate-Source Voltage | ±20V |
| Operating Junction and Storage Temperature | -55 to 150°C |
| Pulsed Drain Current | 40A |
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