This 4Mb asynchronous SRAM has a 16-bit word size and operates at a supply voltage of 3.3V with a maximum supply current of 200mA. It is packaged in a TFBGA package and is mounted on the surface. The device operates within a temperature range of 0°C to 70°C and is compliant with RoHS regulations. The access time is 10ns, and the memory density is 4Mb.
PackageTFBGA
Current200mA
MountingSurface Mount
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Technical Specifications
IDT 71V416S10BEG technical specifications.
General
| Access Time | 10ns |
| Access Time-Max | 10ns |
| Address Bus Width | 18b |
| Package/Case | TFBGA |
| Density | 4Mb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Length | 9mm |
| Max Operating Temperature | 70°C |
| Memory Size | 4Mb |
| Memory Type | RAM, , SRAM - Asynchronous, SDR |
| Min Operating Temperature | 0°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 3V |
| Mount | Surface Mount |
| Number of Ports | 1 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 250 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 200mA |
| Sync/Async | Asynchronous |
| Thickness | 1.2mm |
| Width | 9mm |
| Word Size | 16b |
Compliance
| RoHS | Compliant |
Datasheet
IDT 71V416S10BEG Datasheet
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