This device is an N-channel small-signal MOSFET in a TSOP-6 surface-mount package. It supports a maximum drain-source voltage of 20 V, a continuous drain current of 7.5 A at 25 °C, a pulsed drain current of 30 A, and a maximum power dissipation of 2 W. The MOSFET provides a maximum RDS(on) of 22 mΩ at 4.5 V and 36 mΩ at 2.5 V, with a maximum gate charge of 5.8 nC and input capacitance of 863 pF. It is avalanche rated, dv/dt rated, fast switching, automotive qualified, PPAP capable, lead-free, halogen-free, and RoHS compliant.
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| Drain-Source Voltage Max | 20V |
| Drain Current Continuous @25°C Max | 7.5A |
| Drain Current Pulsed Max | 30A |
| Power Dissipation Max | 2W |
| Input Capacitance Ciss | 863pF |
| Output Capacitance Coss | 278pF |
| Gate Charge Qg Typ @4.5V Max | 5.8nC |
| On-Resistance RDS(on) Max | 36mΩ |
| On-Resistance RDS(on) @4.5V Max | 22mΩ |
| On-Resistance RDS(on) @2.5V Max | 36mΩ |
| Threshold Voltage VGS(th) Min | 0.7V |
| Threshold Voltage VGS(th) Max | 1.2V |
| Operating Temperature Max | 150°C |
| Mounting | SMD |
| Pin Count | 6Pins |
| Polarity | N-Channel |
| Qualification | Automotive |
| Special Features | Small Power |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
