P-channel MOSFET featuring a continuous drain current of 38A and a drain-source voltage of 100V. Offers a low on-resistance of 0.06 ohms. This single-element silicon power transistor is housed in a TO-263AB package. Designed for high-power applications with a maximum operating temperature of 150°C.
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Technical Specifications
Infineon AUIRF5210STRL technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon AUIRF5210STRL Datasheet
Download the complete datasheet for Infineon AUIRF5210STRL to view detailed technical specifications.
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