N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 4.1A continuous drain current. This surface-mount transistor utilizes DirectFET process technology, housed in a 6-pin Direct-FET SB package with no leads. Key specifications include a maximum drain-source on-resistance of 62 mOhm at 10V and a typical gate charge of 8.3 nC. The component offers a wide operating temperature range from -55°C to 175°C.
PackageDirect-FET SB
MountingSurface Mount
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Technical Specifications
Infineon AUIRF7665S2TR1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | Direct-FET SB |
| Package Description | Metal Can Direct FET Package |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.95(Max) |
| Package Width (mm) | 3.95(Max) |
| Package Height (mm) | 0.49(Max) |
| Seated Plane Height (mm) | 0.74(Max) |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DirectFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4.1A |
| Material | Si |
| Maximum Drain Source Resistance | 62@10VmOhm |
| Typical Gate Charge @ Vgs | 8.3@10VnC |
| Typical Gate Charge @ 10V | 8.3nC |
| Typical Input Capacitance @ Vds | 515@25VpF |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon AUIRF7665S2TR1 Datasheet
Download the complete datasheet for Infineon AUIRF7665S2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.