N-channel Power MOSFET featuring 40V drain-source voltage and 46A continuous drain current. This single-element, enhancement-mode silicon MOSFET utilizes DirectFET process technology. It is housed in a 15-pin, lead-frame SMT Direct-FET L8 package with a metal can construction and no leads, measuring 7.1mm x 9.15mm x 0.49mm. Key electrical characteristics include a 1 mOhm drain-source resistance at 10V and a typical gate charge of 220 nC at 10V. Operating temperature range is -55°C to 175°C.
PackageDirect-FET L8
MountingSurface Mount
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Technical Specifications
Infineon AUIRF7739L2TR1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
Direct-FET L8
Package Description
Metal Can Direct FET Package
Lead Shape
No Lead
Pin Count
15
PCB
15
Package Length (mm)
7.1(Max)
Package Width (mm)
9.15(Max)
Package Height (mm)
0.49(Max)
Seated Plane Height (mm)
0.74(Max)
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
DirectFET
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
46A
Material
Si
Maximum Drain Source Resistance
1@10VmOhm
Typical Gate Charge @ Vgs
220@10VnC
Typical Gate Charge @ 10V
220nC
Typical Input Capacitance @ Vds
11880@25VpF
Maximum Power Dissipation
3800mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Infineon AUIRF7739L2TR1 Datasheet
Download the complete datasheet for Infineon AUIRF7739L2TR1 to view detailed technical specifications.
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