N-channel Silicon Power MOSFET, 300V Drain-Source Voltage, 19A Continuous Drain Current. Features HEXFET process technology and a D2PAK (TO-263AB) surface-mount package with gull-wing leads. Maximum power dissipation is 210W, with an operating temperature range of -55°C to 175°C. This single-element device offers a low Drain-Source On-Resistance of 185mOhm at 10V.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon AUIRFS6535TRL technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
300V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
19A
Material
Si
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
185@10VmOhm
Typical Gate Charge @ Vgs
38@10VnC
Typical Gate Charge @ 10V
38nC
Typical Input Capacitance @ Vds
2340@25VpF
Maximum Power Dissipation
210000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon AUIRFS6535TRL Datasheet
Download the complete datasheet for Infineon AUIRFS6535TRL to view detailed technical specifications.
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