N-channel Insulated Gate Bipolar Transistor (IGBT) chip for automotive applications. Features a 600V collector-emitter voltage and 59A continuous collector current. Maximum power dissipation is 246000mW. Packaged in a 3-pin D2PAK (TO-263) surface-mount lead-frame SMT with gull-wing leads. Operating temperature range from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon AUIRGS4062D1TRL technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
59A
Maximum Power Dissipation
246000mW
Typical Collector Emitter Saturation Voltage
1.57V
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon AUIRGS4062D1TRL Datasheet
Download the complete datasheet for Infineon AUIRGS4062D1TRL to view detailed technical specifications.
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