PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 200MHz transition frequency and a maximum power dissipation of 330mW. Packaged in a surface-mount SC-74, 6-pin configuration, suitable for tape and reel packaging. Offers a wide operating temperature range from -65°C to 150°C.
Frequency200MHz
PackageSC
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Infineon BC807UE6327HTSA1 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 700mV |
| Collector-emitter Voltage-Max | 700mV |
| Continuous Collector Current | 500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Halogen Free | Not Halogen Free |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -45V |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC807UE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BC807UE6327HTSA1 to view detailed technical specifications.
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