PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 200MHz transition frequency and a maximum power dissipation of 330mW. Packaged in a surface-mount SC-74, 6-pin configuration, suitable for tape and reel packaging. Offers a wide operating temperature range from -65°C to 150°C.
Frequency200MHz
PackageSC
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Infineon BC807UE6327HTSA1 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
700mV
Collector-emitter Voltage-Max
700mV
Continuous Collector Current
500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Halogen Free
Not Halogen Free
Height
1.1mm
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
330mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-45V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Infineon BC807UE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BC807UE6327HTSA1 to view detailed technical specifications.
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