NPN silicon bipolar junction transistor for general-purpose amplification and switching. Features a 45V collector-emitter breakdown voltage and 0.5A maximum collector current. Operates with a 170MHz transition frequency and a 700mV collector-emitter saturation voltage. Housed in a compact SOT-323 surface-mount package, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency170MHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BC817K25WH6433XTMA1 technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 170MHz |
| Height | 0.8mm |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 170MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC817K25WH6433XTMA1 Datasheet
Download the complete datasheet for Infineon BC817K25WH6433XTMA1 to view detailed technical specifications.
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