NPN silicon bipolar junction transistor for small signal applications. Features a 65V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 250mW. Packaged in a SOT-323-3 surface mount case, this lead-free and RoHS compliant component is supplied on tape and reel.
Frequency250MHz
PackageSOT-323-3
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Infineon BC846BWE6327 technical specifications.
General
Package/Case
SOT-323-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
250mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
Infineon BC846BWE6327 Datasheet
Download the complete datasheet for Infineon BC846BWE6327 to view detailed technical specifications.
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