NPN silicon bipolar junction transistor for small signal applications. Features a 65V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 250mW. Packaged in a SOT-323-3 surface mount case, this lead-free and RoHS compliant component is supplied on tape and reel.
Frequency250MHz
PackageSOT-323-3
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Infineon BC846BWE6327 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC846BWE6327 Datasheet
Download the complete datasheet for Infineon BC846BWE6327 to view detailed technical specifications.
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