Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity, designed for small signal applications. This silicon transistor offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 65V. It operates with a transition frequency of 250MHz and a minimum hFE of 200. The component is housed in a compact SOT-363-6 package, measuring 2mm in length, 1.25mm in width, and 800µm in height, with matte tin contact plating. It is RoHS compliant, halogen-free, and suitable for operation across a wide temperature range from -65°C to 150°C.
Frequency250MHz
PackageSOT-363-6
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Infineon BC846PNH6327XTSA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 650mV |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC846PNH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BC846PNH6327XTSA1 to view detailed technical specifications.
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