NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Operates with a collector-emitter voltage of 600mV and a transition frequency of 250MHz. Packaged in a TSLP-3-1 (3 PIN) surface-mount configuration, this component is RoHS compliant and halogen-free.
Frequency250MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Infineon BC847BL3E6327XTMA1 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Gold |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 45V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC847BL3E6327XTMA1 Datasheet
Download the complete datasheet for Infineon BC847BL3E6327XTMA1 to view detailed technical specifications.
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