NPN bipolar junction transistor featuring a 45V collector-emitter breakdown voltage and 100mA continuous collector current. This surface mount device operates with a maximum power dissipation of 250mW and a transition frequency of 250MHz. It is housed in a compact SOT-363-6 package, offering a minimum hFE of 200 and a collector-emitter saturation voltage of 600mV. The component is RoHS compliant and halogen-free, designed for a wide operating temperature range from -65°C to 150°C.
Frequency250MHz
PackageSOT-363-6
Voltage45V
Current2A
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Technical Specifications
Infineon BC847SH6327XTSA1 technical specifications.
General
Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
600mV
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Continuous Collector Current
100mA
Current
2A
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Halogen Free
Halogen Free
Height
800um
hFE Min
200
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
250mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
Voltage
45V
DC Rated Voltage
45V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BC847SH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BC847SH6327XTSA1 to view detailed technical specifications.
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