
NPN bipolar junction transistor featuring a 45V collector-emitter breakdown voltage and 100mA continuous collector current. This surface mount device operates with a maximum power dissipation of 250mW and a transition frequency of 250MHz. It is housed in a compact SOT-363-6 package, offering a minimum hFE of 200 and a collector-emitter saturation voltage of 600mV. The component is RoHS compliant and halogen-free, designed for a wide operating temperature range from -65°C to 150°C.
Infineon BC847SH6327XTSA1 technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 100mA |
| Current | 2A |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Voltage | 45V |
| DC Rated Voltage | 45V |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BC847SH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
