The BC849B is a NPN bipolar junction transistor with a collector base voltage rating of 30V and an emitter base voltage rating of 6V. It has a collector emitter saturation voltage of 600mV and a maximum collector current of 100mA. The transistor is packaged in a small outline package with dimensions of 2.9mm in length and 1.3mm in width, and 1mm in height. It is rated for operation at temperatures up to 150°C and can handle a maximum power dissipation of 330mW. The BC849B is available on tape and reel for easy handling and assembly.
Frequency250MHz
PackageSOT
PolarityNPN
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Technical Specifications
Infineon BC849B technical specifications.
General
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1mm |
| Length | 2.9mm |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC849B Datasheet
Download the complete datasheet for Infineon BC849B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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